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Flexible Large‐Area Light‐Emitting Devices Based on WS 2 Monolayers
Author(s) -
Andrzejewski Dominik,
Oliver Ruth,
Beckmann Yannick,
Grundmann Annika,
Heuken Michael,
Kalisch Holger,
Vescan Andrei,
Kümmell Tilmar,
Bacher Gerd
Publication year - 2020
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.202000694
Subject(s) - materials science , monolayer , electroluminescence , optoelectronics , semiconductor , nanotechnology , flexible electronics , photodetector , chemical vapor deposition , transistor , millimeter , optics , voltage , layer (electronics) , physics , quantum mechanics
Strong covalent in‐plane bonds and a tiny thickness in the nanometer range make two‐dimensional (2D) materials ideally suited for flexible electronic or optoelectronic applications. Despite this exciting perspective, only a few prototypes of such flexible devices—photodetectors and transistors—have been reported until now. The first large‐area flexible light‐emitting device (LED) based on 2D materials is realized by integrating a transition metal dichalcogenide (TMDC) monolayer synthesized by metal organic chemical vapor deposition (MOCVD) into a p–n architecture on conductive polymer foil. This flexible LED demonstrates homogeneous red light emission from a few square millimeter area in a scalable design. Uniquely, the electroluminescence can be tuned over 30 meV simply by bending the devices, i.e., by applying a defined strain. This approach combines the flexibility of organic semiconductor device concepts with the durability of inorganic semiconductor technology.