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CMOS Compatible High‐Performance Nanolasing Based on Perovskite–SiN Hybrid Integration
Author(s) -
He Zhe,
Chen Bo,
Hua Yan,
Liu Zhuojun,
Wei Yuming,
Liu Shunfa,
Hu An,
Shen Xinyu,
Zhang Yu,
Gao Yunan,
Liu Jin
Publication year - 2020
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.202000453
Subject(s) - materials science , lasing threshold , optoelectronics , photonics , silicon photonics , photonic crystal , silicon , perovskite (structure) , laser linewidth , nanotechnology , laser , optics , wavelength , engineering , physics , chemical engineering
Coherent light sources in silicon photonics are the long‐sought Holy Grail because silicon‐based materials have indirect bandgap. Traditional strategies for realizing such sources, e.g., heterogeneous photonic integration, strain engineering, and nonlinear process, are technologically demanding. Here, a hybrid lasing device composed of perovskite nanocrystals and silicon nitride nanobeam cavity is demonstrated. SiN photonic crystal naonobeam cavities are fabricated on a solid substrate with significantly improved thermal and mechanical stabilities compared to conventional suspended ones. In addition, adding a poly (methyl methacrylate) (PMMA)‐encapsulation layer on top of the SiN can significantly boost the Q ‐factor of the cavity mode. By dispersing perovskite nanocrystals as emitters in the PMMA layer, high‐performance coherent emissions are obtained in terms of lasing threshold, linewidth, and mode volumes. The work offers a compelling way of creating solution‐processed active integrated photonic devices based on the mature platform of silicon photonics for applications in optical information science and photonic quantum technology.