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Delayed Charge Recombination by Open‐Shell Organics: Its Application in Achieving Superb Photodetectors with Broadband (400–1160 nm) Ultrahigh Sensitivity and Stability
Author(s) -
Shen ShinWei,
Chen DengGao,
Chen ITung,
Chang KaiHsin,
Lee ChuanWei,
Fang ChiaTe,
Chen YiTing,
Chuang WeiTsung,
Lee YiHsien,
Wu YaoTing,
Chou PiTai,
Wu ChihI
Publication year - 2020
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201902179
Subject(s) - photodetector , materials science , optoelectronics , heterojunction , monolayer , responsivity , band gap , charge carrier , ultraviolet , exciton , absorption (acoustics) , nanotechnology , physics , quantum mechanics , composite material
Monolayer transition‐metal dichalcogenides have inspired worldwide efforts in optoelectronic devices but real applications are hindered with their reduced optical absorption due to their atomically ultrathin signature. In this study, by utilizing their biradical nature such as excellent absorption coefficient, broad bandwidth from the ultraviolet to near‐infrared region, and small triplet–singlet energy gap, a series of helicene 5,14‐diaryldiindeno[2,1‐f:1′,2′‐j]picene (DDP) derivatives ( 1ab , 1ac , and 1bb ) are integrated with monolayer MoS 2 for extraordinary photodetector performance and outstanding stability. Via comprehensive time‐resolved studies, the interfacial charge‐transfer process from the DDPs to the MoS 2 layer is evidenced by the stabilized exciton property of the organics ( 1ac )/MoS 2 heterostructure. Significantly, the 1ac /MoS 2 photodetector exhibits an ultrahigh photoresponsivity of 5 × 10 7 A W −1 and a fast response speed of 45 ms due to the highly efficient photoexcited carrier separation and the matched type‐II energy band alignment. The biradical 1ac /MoS 2 hybrid photodetector shows no sign of degradation after one‐month operation. The results pave a new avenue for biradical based high‐performance and super‐broadband optoelectronic devices.