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Manipulating Photoluminescence of Carbon G‐center in Silicon Metasurface with Optical Bound States in the Continuum
Author(s) -
Zhu Liangqiu,
Yuan Shuai,
Zeng Cheng,
Xia Jinsong
Publication year - 2020
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201901830
Subject(s) - photoluminescence , materials science , silicon , optoelectronics , dielectric , polarization (electrochemistry) , asymmetry , quality (philosophy) , optics , physics , chemistry , quantum mechanics
In this paper, a dielectric metasurface is demonstrated to manipulate the photoluminescence of the G‐centers introduced by nanopatterning of crystalline silicon. The metasurface consists of asymmetric holes arranged in a square array, which can transform the bound states in the continuum (BICs) with infinite quality factor to a quasi‐BICs, while maintaining high quality factor of the optical resonance. Compared with the photoluminescence of G‐centers with nonresonance enhancement, ≈40 times photoluminescence enhancement is achieved, accompanied by a near‐zero threshold at cryogenic temperature. In addition, the polarization of the photoluminescence is controlled by the structural asymmetry. These findings provide a novel approach to enhance and manipulate the photoluminescence of G‐centers and may anticipate for realizing light source in silicon.