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On the Origin of Dark Current in Organic Photodiodes
Author(s) -
Simone Giulio,
Dyson Matthew J.,
Weijtens Christ H. L.,
Meskers Stefan C. J.,
Coehoorn Reinder,
Janssen René A. J.,
Gelinck Gerwin H.
Publication year - 2020
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201901568
Subject(s) - photodiode , dark current , materials science , photodetector , optoelectronics , heterojunction , active layer , organic semiconductor , charge carrier , semiconductor , sensitivity (control systems) , quantum efficiency , reverse bias , biasing , nanotechnology , layer (electronics) , voltage , physics , diode , electronic engineering , quantum mechanics , engineering , thin film transistor
Minimizing the reverse bias dark current while retaining external quantum efficiency is crucial if the light detection sensitivity of organic photodiodes (OPDs) is to compete with inorganic photodetectors. However, a quantitative relationship between the magnitude of the dark current density under reverse bias ( J d ) and the properties of the bulk heterojunction (BHJ) active layer has so far not been established. Here, a systematic analysis of J d in state‐of‐the‐art BHJ OPDs using five polymers with a range of energy levels and charge transport characteristics is presented. The magnitude and activation energy of J d are explained using a model that assumes charge injection from the metal contacts into an energetically disordered semiconductor. By relating J d to material parameters, insights into the origin of J d are obtained that enable the future selection of successful OPD materials.
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