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Narrow‐Band QD‐Enhanced PIN Metal‐Oxide Heterostructure Phototransistor with the Assistance of Printing Processes
Author(s) -
Liu Xiang,
Zhou Wenxing,
Tao Yuan,
Mao Lei,
Chang Jianhua,
Hu Hai,
Li Chi,
Dai Qing
Publication year - 2020
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201901472
Subject(s) - photodiode , optoelectronics , materials science , heterojunction , detector , bandwidth (computing) , photodetector , power consumption , power (physics) , optics , computer science , telecommunications , physics , quantum mechanics
Infrared (IR) phototransistors are important building blocks for the true integration of flat‐panel optoelectronic detectors. Although significant progress is made in obtaining an InGaZnO active layer with IR response, the utilization of a high‐performance detector still has many challenges due to low efficiency, high power consumption, and lagging detection speed. Herein, a positive‐intrinsic‐negative (PIN) heterostructure phototransistor directly modulating the charges' transfer barrier with low power consumption (1 nW), high efficiency (EQE > 700%), a 200 Hz detecting bandwidth, and high detectivity (1 × 10 11 cm Hz 1/2 W −1 ) at an IR wavelength (1.5 µm in the high‐frequency circumstance) is demonstrated. These excellent sensing properties of the PIN phototransistor, together with its advantages of low power consumption and versatility, make the use of a heterostructure a powerful strategy for the development of on‐chip optoelectronic detectors.