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Catalyst‐Free Vapor–Solid Deposition Growth of β‐Ga 2 O 3 Nanowires for DUV Photodetector and Image Sensor Application
Author(s) -
Xie Chao,
Lu XingTong,
Ma MengRu,
Tong XiaoWei,
Zhang ZhiXiang,
Wang Li,
Wu ChunYan,
Yang WenHua,
Luo LinBao
Publication year - 2019
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201901257
Subject(s) - responsivity , photodetector , materials science , nanowire , photodetection , optoelectronics , chemical vapor deposition , optics , specific detectivity , detector , dark current , photoconductivity , physics
Photodetection in the solar‐blind deep‐ultraviolet (DUV) regime (200–280 nm) has received significant attention for its many critical applications in military and civil areas. In this study, a vapor–solid synthesis technique for catalyst‐free growth of single‐crystalline β‐Ga 2 O 3 nanowires is developed. A photodetector made of the nanowires is highly sensitive to 265 nm DUV illumination with excellent photoresponse performance. The performance parameters including I light / I dark ratio, responsivity, specific detectivity and response speed can attain ≈10 3 , ≈233 A W −1 , ≈8.16 × 10 12 Jones, and 0.48/0.04 s, respectively. Additionally, the detector has an abrupt response cutoff wavelength at ≈290 nm with a reasonable DUV/visible (250–405 nm) rejection ratio exceeding 10 2 . It is also found that the device can operate properly at a large applied bias of 200 V with the responsivity being enhanced to as high as ≈1680 A W −1 . Moreover, such a nanowires‐based photodetector can function as a DUV light image sensor with a reasonable spatial resolution. Holding the above advantages, the present DUV photodetector based on catalyst‐free grown β‐Ga 2 O 3 nanowires possesses huge possibility for application in future DUV optoelectronics.