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Integration of MoS 2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands
Author(s) -
Deng Jianan,
Zong Lingyi,
Bao Wenzhong,
Zhu Mingsai,
Liao Fuyou,
Guo Zhongxun,
Xie Yuying,
Lu Bingrui,
Wan Jing,
Zhu Jiahe,
Peng Ruwen,
Chen Yifang
Publication year - 2019
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201901039
Subject(s) - materials science , optoelectronics , heterojunction , photodiode , indium gallium arsenide , photodetection , photocurrent , infrared , band gap , transistor , semiconductor , ternary operation , photodetector , gallium arsenide , voltage , optics , electrical engineering , computer science , physics , programming language , engineering
At present, dual‐channel or even multi‐channel recording is a developing trend in the field of photodetection, which is widely applied in environment protection, security, and space science and technology. This paper proposes a novel MoS 2 /InAlAs/InGaAs n–i–n heterojunction phototransistor by integrating multi‐layered MoS 2 with InGaAs‐based high electron mobility transistors (InGaAs‐HEMTs). Due to the internal photocurrent amplification in the InGaAs channels with a narrow energy bandgap of 0.79 eV, this device exhibits high photoresponsivity ( R ) of over 8 × 10 5 A W –1 under near‐infrared illumination of 1550 nm at 500 pW. Furthermore, with the combination of the photoconductance effect in the vertical MoS 2 /InAlAs/InGaAs n–i–n heterojunction and the photogating effect in the lateral phototransistor, this device possesses a unique characteristic under visible illumination that its photoresponsivity can be tuned by the top gate electrode from 6 × 10 5 A W –1 to ‐4 × 10 5 A W –1 by gate voltage. This may lead to a new application as an optically controlled electronic inverter, which needs further study in depth. This MoS 2 /InAlAs/InGaAs phototransistor builds up a new bridge between 2D materials and conventional ternary compounded semiconductor devices.