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Lateral Bilayer MoS 2 –WS 2 Heterostructure Photodetectors with High Responsivity and Detectivity
Author(s) -
Ye Kun,
Liu Lixuan,
Liu Yujie,
Nie Anmin,
Zhai Kun,
Xiang Jianyong,
Wang Bochong,
Wen Fusheng,
Mu Congpu,
Zhao Zhisheng,
Gong Yongji,
Liu Zhongyuan,
Tian Yongjun
Publication year - 2019
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201900815
Subject(s) - heterojunction , materials science , optoelectronics , responsivity , photodetector , bilayer , photoluminescence , chemical vapor deposition , semiconductor , raman spectroscopy , optics , physics , membrane , biology , genetics
2D heterostructures combining different layered semiconductors have received great interest due to their intriguing electrical and optical properties. However, the arbitrary growth of layers in a lateral heterostructure remains a challenge. Here, the synthesis of large‐scale lateral bilayer (LBL) WS 2 –MoS 2 heterostructures is reported by a two‐step chemical vapor deposition route. Raman, photoluminescence, and second‐harmonic generation images show the sharp boundaries between WS 2 and MoS 2 domains in the heterostructure. Atomically resolved scanning transmission electron microscopy further reveals that sharp boundaries are formed by seamless connections via a lateral zigzag epitaxy between WS 2 and MoS 2 . Notably, the photodetector device based on the LBL WS 2 –MoS 2 heterostructure exhibits ultrahigh photoresponsivity and detectivity (6.72 × 10 3 A W −1 and 3.09 × 10 13 Jones for 457 nm laser light, respectively), orders of magnitude higher than those of MoS 2 and WS 2 monocrystals. These excellent performances render LBL WS 2 –MoS 2 heterostructures as promising candidates for next‐generation optoelectronics.