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Surface Halogen Compensation for Robust Performance Enhancements of CsPbX 3 Perovskite Quantum Dots
Author(s) -
Yang Dandan,
Li Xiaoming,
Wu Ye,
Wei Changting,
Qin Zhengyuan,
Zhang Chunfeng,
Sun Zhiguo,
Li Yuelei,
Wang Yue,
Zeng Haibo
Publication year - 2019
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201900276
Subject(s) - perovskite (structure) , materials science , photoluminescence , quantum yield , halide , quantum dot , exciton , optoelectronics , light emitting diode , diode , luminescence , chemical physics , nanotechnology , optics , fluorescence , condensed matter physics , crystallography , physics , chemistry , inorganic chemistry
Understanding the subtle structure–property relationships of quantum dots (QDs) is essential for targeted modulation of optoelectronic properties, and the influences of surface defects of inorganic halide perovskite (HP) QDs are still not very clear. Here, the negative exciton trapping effects of surface halide vacancies ( V X ) on the photoluminescence quantum yield QY (PLQY) of HPQDs are determined by a detailed analysis of the optical parameters, exciton dynamics, and surface chemical states. Based on the fact that V X contribute greatly to nonradiative recombination processes, versatile in situ and postpassivation strategies are developed by constructing intact Pb–X octahedrons. High QYs for standard red CsPbBr 1 I 2 (85%), green CsPbBr 3 (96%), and blue CsPbBr 1.3 Cl 1.7 (92%) emissions are achieved. The superiorities of the reduced V X are further demonstrated by high external quantum efficiency of 0.8% and a stable emission wavelength of the blue light‐emitting diodes. This study deepens the understanding of HPQDs and demonstrates the potential for the artificial control of the optical properties of HPQDs.