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Black Phosphorous/Indium Selenide Photoconductive Detector for Visible and Near‐Infrared Light with High Sensitivity
Author(s) -
Cao Rui,
Wang HuiDe,
Guo ZhiNan,
Sang David K.,
Zhang LiYuan,
Xiao QuanLan,
Zhang YuPeng,
Fan DianYuan,
Li JianQing,
Zhang Han
Publication year - 2019
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201900020
Subject(s) - photodetector , materials science , optoelectronics , responsivity , selenide , photoconductivity , indium , stacking , quantum efficiency , infrared , detector , optics , physics , selenium , metallurgy , nuclear magnetic resonance
2D materials offer tremendous opportunities for designing and investigating multifunctional high‐performance electronic and optoelectronic devices. In this contribution, a photogate vertical structure is devised by vertically stacking layered indium selenide (InSe) on top of layered black phosphorous (BP). The photodetector built with the vertical structure possesses a wide response range from 405 to 1550 nm, and the photodetector exhibits a relatively fast (≈22 ms) response and high responsivity of ≈53.80 A W −1 at λ = 655 nm and 43.11 A W −1 at λ = 1550 nm, respectively. Under visible‐light illumination (λ = 655 nm), the external quantum efficiency of the device can reach 1020%. By taking advantage of gate‐tunable modulation, the forward‐to‐reverse bias current ratio is as high as 10 3 . In addition, the environmental degradation of BP could be effectively suppressed by InSe capping. The high sensitivity, broad spectral response, and enhanced stability of the photodetector show that the photogate structure provides a new opportunity for broad spectral detection or imaging at room temperature by using 2D materials with a vertical structure.