Premium
Embedded Optics: Flat Optical and Plasmonic Devices Using Area‐Selective Ion‐Beam Doping of Silicon (Advanced Optical Materials 5/2018)
Author(s) -
Salman Jad,
Hafermann Martin,
Rensberg Jura,
Wan Chenghao,
Wambold Raymond,
Gundlach Bradley S.,
Ronning Carsten,
Kats Mikhail A.
Publication year - 2018
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201870019
Subject(s) - materials science , opacity , silicon , wafer , optics , doping , optoelectronics , infrared , plasmon , beam (structure) , ion beam , physics
A tiling of mid‐infrared images of an ion‐beam‐doped Fresnel zone plate embedded within a silicon wafer is shown on the cover, see also article number 1701027 by Mikhail A. Kats and co‐workers. In one set of images, a human hand in the background acts as an infrared light source, highlighting the transparent and opaque regions of the silicon defined via ion‐beam doping. In the other, infrared light emitted from the camera itself is reflected from the metal‐like opaque regions. (Photo credit: Jad Salman and Zhaoning Yu.)