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Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt
Author(s) -
Wang Yixin,
Rong Xin,
Ivanov Sergey,
Jmerik Valentin,
Chen Zhaoying,
Wang Hui,
Wang Tao,
Wang Ping,
Jin Peng,
Chen Yanan,
Kozlovsky Vladimir,
Sviridov Dmitry,
Zverev Michail,
Zhdanova Elena,
Gamov Nikita,
Studenov Valentin,
Miyake Hideto,
Li Hongwei,
Guo Shiping,
Yang Xuelin,
Xu Fujun,
Yu Tongjun,
Qin Zhixin,
Ge Weikun,
Shen Bo,
Wang Xinqiang
Publication year - 2019
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201801763
Subject(s) - materials science , optoelectronics , wavelength , chemical vapor deposition , ultraviolet , cathode ray , optics , beam (structure) , quantum well , laser , electron , physics , quantum mechanics
High‐output‐power electron‐beam (e‐beam) pumped deep ultraviolet (DUV) light sources, operating at 230–270 nm, are achieved by adjusting the well thickness of binary ultrathin GaN/AlN multiple quantum wells. These structures are fabricated on high‐quality thermally annealed AlN templates by metal‐organic chemical vapor deposition. Owing to the reduced dislocation density, large electron–hole overlap, and efficient carrier injection by e‐beam, the DUV light sources demonstrate high output powers of 24.8, 122.5, and 178.8 mW at central wavelengths of 232, 244, and 267 nm, respectively. Further growth optimization and employing an e‐gun with increased beam current lead to a record output power of ≈2.2 W at emission wavelength of ≈260 nm, the key wavelength for water sterilization. This work manifests the practical levels of high‐output‐power DUV light sources operated by using e‐beam pumping method.