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Broadband Ultraviolet Photodetector Based on Vertical Ga 2 O 3 /GaN Nanowire Array with High Responsivity
Author(s) -
He Tao,
Zhang Xiaodong,
Ding Xiaoyu,
Sun Chi,
Zhao Yukun,
Yu Qiang,
Ning Jiqiang,
Wang Rongxin,
Yu Guohao,
Lu Shulong,
Zhang Kai,
Zhang Xinping,
Zhang Baoshun
Publication year - 2019
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201801563
Subject(s) - materials science , responsivity , optoelectronics , nanowire , photodetector , heterojunction , ultraviolet , graphene , molecular beam epitaxy , broadband , optics , nanotechnology , epitaxy , layer (electronics) , physics
Broadband ultraviolet (BUV) photodetectors responding to the multiband spectrum can effectively reduce false alarm rates and improve the accuracy and versatility of detection systems in various situations. A high‐responsivity BUV photodetector based on vertical Ga 2 O 3 /GaN nanowire array is proposed and demonstrated. Ga 2 O 3 /GaN nanowires are obtained by partially thermally oxidizing GaN nanowires grown by molecular beam epitaxy and used to combine with a monolayer graphene film to form graphene/Ga 2 O 3 /GaN heterojunction. Moreover, the oxidation mechanism of GaN nanowires is further investigated by the developed thermal oxidation model. The fabricated devices exhibit excellent performance with a broadband spectral response of exceeding 550 A W −1 at −5 V and a fast‐response speed in the millisecond range, which can be attributed to the optical properties of vertical nanowire array structure and the internal gain mechanism of graphene/Ga 2 O 3 /GaN heterojunction.