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Efficient n‐Dopants and Their Roles in Organic Electronics
Author(s) -
Bin Zhengyang,
Liu Ziyang,
Qiu Yong,
Duan Lian
Publication year - 2018
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201800536
Subject(s) - dopant , doping , organic electronics , materials science , oled , electronics , organic semiconductor , nanotechnology , organic solar cell , transistor , diode , optoelectronics , engineering physics , electrical engineering , polymer , physics , voltage , layer (electronics) , composite material , engineering
The n‐type doping is an effective method to improve electron injection/extraction which not only provides a way to fine‐control the energy level of organic semiconductors, but also greatly improves the efficiency and even enhances the stability of organic electronics, such as organic light‐emitting diodes, organic solar cells, and organic field‐effect transistors. Over the decades, n‐dopants are highly concerned by researchers and rapid advances are made in n‐doping species and models. In this paper, the recent progress on efficient n‐dopants and their roles in organic electronics are comprehensively reviewed from the perspective of doping physics, doping chemistry, and doping performance for devices.