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Strong SHG Response via High Orientation of Tetrahedral Functional Motifs in Polyselenide A 2 Ge 4 Se 10 (A = Rb, Cs)
Author(s) -
Liu BinWen,
Hu ChunLi,
Zeng HuiYi,
Jiang XiaoMing,
Guo GuoCong
Publication year - 2018
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201800156
Subject(s) - materials science , second harmonic generation , tetrahedron , dipole , nonlinear optical , infrared , orientation (vector space) , nonlinear optics , optoelectronics , laser , nonlinear system , crystallography , optics , physics , chemistry , geometry , mathematics , quantum mechanics
Nonlinear optical (NLO) materials with strong second harmonic generation (SHG) responses are technologically and scientifically important for tunable lasers. This work puts forward a new strategy for designing promising infrared nonlinear optical (IR‐NLO) materials with strong SHG responses by strengthening both the static and induced contributions via the high orientation of NLO functional motifs. Two new polyselenides Rb 2 Ge 4 Se 10 and Cs 2 Ge 4 Se 10 are studied to verify the strategy, they have 2D infinite∞ 2 [Ge 4 Se 10 ] 2− layers comprising highly oriented distorted GeSe 4 tetrahedra. Their large SHG signals (8.0 and 8.5 times that of commercial AgGaS 2 ) can be ascribed to both the static contribution enhancement from the high orientation of the local dipole moment of GeSe 4 tetrahedra and the induced contribution enhancement from terminal and SeSe bonded Se atoms. The results confirm the effectiveness of the proposed approaches, shedding light on the exploration of practical IR‐NLO materials with maximized performance.