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Photodetectors: Broadband High‐Responsivity Photodetectors Based on Large‐Scale Topological Crystalline Insulator SnTe Ultrathin Film Grown by Molecular Beam Epitaxy (Advanced Optical Materials 5/2017)
Author(s) -
Jiang Tian,
Zang Yunyi,
Sun Honghui,
Zheng Xin,
Liu Yu,
Gong Yan,
Fang Liang,
Cheng Xiang'ai,
He Ke
Publication year - 2017
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201770031
Subject(s) - responsivity , photodetector , molecular beam epitaxy , materials science , optoelectronics , photoconductivity , broadband , epitaxy , infrared , topological insulator , thin film , detector , optics , nanotechnology , layer (electronics) , physics , condensed matter physics
Broadband high responsivity photodetectors based on large scale topological crystalline insulator SnTe ultrathin film grown by molecular beam epitaxy are fabricated by Tian Jiang, Xiang'ai Cheng, and co‐workers in article number 1600727. The photoconductive detectors exhibit fast and stable photoresponses from the visible to mid‐infrared range (405 nm−3.8 μm) and high responsibility (3.75 AW −1 at 2003 nm at room temperature), which will promote applications in broadband and sensitive optoelectronic devices.