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New Insights into the Formation and Color‐Tunable Optical Properties of Multinary Cu‐In‐Zn‐Based Chalcogenide Semiconductor Nanocrystals
Author(s) -
Guan Zhongyuan,
Tang Aiwei,
Lv Peiwen,
Liu Zhenyang,
Li Xu,
Tan Zhan'ao,
Hayat Tasawar,
Alsaedi Ahmed,
Yang Chunhe,
Teng Feng
Publication year - 2018
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201701389
Subject(s) - chalcogenide , materials science , nanocrystal , quantum dot , photoluminescence , doping , chalcogen , light emitting diode , x ray photoelectron spectroscopy , semiconductor , analytical chemistry (journal) , chemical engineering , optoelectronics , nanotechnology , crystallography , chemistry , chromatography , engineering
A series of multinary Cu‐In‐Zn‐Se‐S nanocrystals (NCs) are synthesized via a phosphine‐free and one‐pot approach, in which the Se powder and 1‐dodecanethiol (DDT) are used as chalcogenide sources, respectively. The X‐ray photoelectron spectra are used to confirm the presence of lattice sulfur in the as‐obtained products. The emission color and the relative photoluminescence quantum yields of the Cu‐In‐Zn‐Se‐S NCs can be tuned by varying the Cu contents, the amount of Se powder, as well as the DDT dosage. In addition, the formation process of the multinary Cu‐In‐Zn‐Se‐S NCs is different from that of quaternary Cu‐In‐Zn‐S NCs, which is dominated by the doping of Cu ions into the In‐deficient In‐Zn‐Se‐S NCs but not the partial interdiffusion of Zn 2+ into the Cu‐based NCs. This plausible deduction is based on the comparison of optical properties of the products synthesized using the hot‐injection and one‐pot methods. Furthermore, the performance of the solution‐processed quantum‐dot light‐emitting diodes (QLEDs) using the Cu‐In‐Zn‐Se‐S NCs as emission layers is examined, and the QLEDs exhibit a high luminance over 1500 cd m −2 and a high peak current efficiency of ≈0.4 cd A −1 at 1000 cd m −2 .