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Epsilon‐Near‐Zero Photonics: A New Platform for Integrated Devices
Author(s) -
Niu Xinxiang,
Hu Xiaoyong,
Chu Saisai,
Gong Qihuang
Publication year - 2018
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201701292
Subject(s) - photonics , quantum tunnelling , optoelectronics , materials science , nanotechnology , physics
Abstract Epsilon‐near‐zero (ENZ) photonics is the study of light–matter interactions in the presence of structures with near‐zero permittivity and has been emerging as an important field of research in recent years. The introduction of zero permittivity structures also introduces a number of unique features to traditional photonic systems, including decoupling of their spatial and temporal field variations, tunneling through arbitrary channels, constant phase transmission, strong field confinement, and ultrafast phase transitions. Along with the continued developments in the theoretical research on ENZ photonics, many novel functional photonic devices are proposed and demonstrated experimentally, thus indicating the broad prospects of ENZ photonics for fabrication of high‐performance integrated photonic chips. Zero‐epsilon materials, which represent a singular point in optical materials, are expected to lead to remarkable developments in the fields of integrated photonic devices and optical interconnections. This review summarizes the underlying principles, the related novel physical effects, the fundamental principles for realization of ENZ photonic systems, and the integrated device applications of ENZ photonics. The review concludes with a brief overview of the challenges to be confronted and the potential development directions that may be pursued to realize extensive applications of ENZ photonics in the field of integrated photonic signal processing.