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Anti‐Stokes Photoluminescence of van der Waals Layered Semiconductor PbI 2
Author(s) -
Cong Chunxiao,
Shang Jingzhi,
Niu Lin,
Wu Lishu,
Chen Yu,
Zou Chenji,
Feng Shun,
Qiu ZhiJun,
Hu Laigui,
Tian Pengfei,
Liu Zheng,
Yu Ting,
Liu Ran
Publication year - 2017
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201700609
Subject(s) - photoluminescence , materials science , lasing threshold , semiconductor , van der waals force , optoelectronics , perovskite (structure) , photovoltaics , nanotechnology , photovoltaic system , chemistry , crystallography , molecule , wavelength , ecology , organic chemistry , biology
Recently, organic–inorganic lead iodide perovskite has become one of the most promising emergent materials, which exhibits great potential in photovoltaics, lasing, laser cooling, etc. The building block of such great material is PbI 2 , a van der Waals (vdW) layered semiconductor material, which arouses increased interest also owing to its potential applications for X‐ray and γ‐ray detection, lasing, etc. Similar and even superior to some vdW layered materials such as thin layers of transition metal dichalcogenides like MoS 2 , WS 2 , MoSe 2 , or WSe 2 , PbI 2 layers possess a direct bandgap of visible frequency with a wide range of thicknesses (>3 layers). This study reports the anti‐Stokes photoluminescence (ASPL) of PbI 2 layers, which is very rarely investigated at present. Universe and robust ASPL in both 4H‐ and 2H‐PbI 2 layers are observed and a phonon‐assisted and multiphoton absorption up‐conversion mechanisms are proposed through in situ temperature‐dependent, incident laser‐power‐dependent measurements of both Stokes photoluminescence and ASPL. The successful observation and explanation of the universal anti‐Stokes emission of PbI 2 layers, will certainly enrich fundamental understandings of vdW layered semiconductors and perovskite, then further benefit to developing applications based on such emerging materials.