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Optical Detection and Spatial Modulation of Mid‐Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor
Author(s) -
Di Paola Davide Maria,
Velichko Anton V.,
Bomers Mario,
Balakrishnan Nilanthy,
Makarovsky Oleg,
Capizzi Mario,
Cerutti Laurent,
Baranov Alexei N.,
Kesaria Manoj,
Krier Anthony,
Taliercio Thierry,
Patanè Amalia
Publication year - 2018
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201700492
Subject(s) - materials science , plasmon , doping , semiconductor , surface plasmon polariton , optoelectronics , surface plasmon , infrared , polariton , surface plasmon resonance , nanotechnology , optics , nanoparticle , physics
Abstract Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid‐infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Postgrowth hydrogenation of In(AsN) creates a highly conducting channel near the surface and a surface plasmon polariton detected by attenuated total reflection techniques. The suppression of plasmonic effects following a photoannealing of the semiconductor is attributed to the dissociation of the NH bond. This offers new routes for direct patterning of MIR plasmonic structures by laser writing.