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Dielectric Resonators: III–V Semiconductor Nanoresonators—A New Strategy for Passive, Active, and Nonlinear All‐Dielectric Metamaterials (Advanced Optical Materials 10/2016)
Author(s) -
Liu Sheng,
Keeler Gordon A.,
Reno John L.,
Sinclair Michael B.,
Brener Igal
Publication year - 2016
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201670058
Subject(s) - materials science , dielectric , optoelectronics , metamaterial , resonator , semiconductor , refractive index , fabrication , brightness , nonlinear optics , semiconductor device fabrication , optics , laser , physics , medicine , alternative medicine , pathology , wafer
On page 1457, multilayer dielectric metasurfaces made from III–V semiconductors are reported by S. Liu, I. Brener, and co‐workers. The metasurfaces are fabricated using a monolithic fabrication technique that separates the high‐index dielectric resonators from a low refractive index oxide created using a selective wet oxidation process. Multilayer structured metasurfaces could enable novel functions such as efficient second‐harmonic generation, ultrashort optical pulse recompression, and high brightness single photon emission.