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Enhanced Carrier Multiplication in InAs Quantum Dots for Bulk Avalanche Photodetector Applications
Author(s) -
Ma YingJie,
Zhang YongGang,
Gu Yi,
Chen XingYou,
Wang Peng,
Juang BorChau,
Farrell Alan,
Liang BaoLai,
Huffaker Diana L.,
Shi YanHui,
Ji WanYan,
Du Ben,
Xi SuPing,
Tang HengJing,
Fang JiaXiong
Publication year - 2017
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201601023
Subject(s) - avalanche photodiode , photocurrent , optoelectronics , materials science , quantum dot , apds , multiplication (music) , multiple exciton generation , photodetector , silicon , ionization , detector , optics , physics , quantum mechanics , acoustics , ion
Exploring the potentiality of enhancing the performance of avalanche photodiodes (APDs) using novel nanoscale structures is highly attractive for overcoming the bottleneck of avalanche probability. This work demonstrates, for the first time, multiplication enhancement of electron‐initiated photocurrent due to impact ionization in InAs quantum dots (QDs) within a GaAs APD structure. A five‐layer stacked 2.25 MLs InAs QD/50 nm GaAs spacer multiplication structure integrated into a separated absorption, charge, and multiplication GaAs homo APD results in up to six times higher multiplication factors in comparison to a reference device without QD over a temperature range of 77–300 K. In addition, extremely low excess noise factor in close proximity to that of silicon is also observed with an effective k eff factor below 0.1. This demonstration is of fundamental interest and relevant for future ultra efficient avalanche detector applications.