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High Temperature Coupling of IR Inactive CC Mode in Complementary Metal Oxide Semiconductor Metamaterial Structure
Author(s) -
Hasan Dihan,
Pitchappa Prakash,
Pei Ho Chong,
Lee Chengkuo
Publication year - 2017
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201600778
Subject(s) - materials science , optoelectronics , coupling (piping) , semiconductor , chemical vapor deposition , metamaterial , infrared , thin film , optics , nanotechnology , composite material , physics
High temperature (up to 400 °C) coupling of infrared (IR) inactive >CC< mode is reported in complementary metal oxide semiconductor (CMOS)‐compatible refractory metamaterial filter and absorber structure by leveraging the carbon defects in tetraethyl orthosilicate obtained plasma enhanced chemical vapor deposition SiO 2 thin film. Here, the role of strain gradient induced dipole moment in high stress configuration on the activation of otherwise inactive >CC< vibration at IR is confirmed. The unusual suppression of the transition is also observed in the absorber structure when the cavity mode strongly overlaps with it. Finally, 14 times better modulation of resonance spectrum is reported by such coupling in absorber configuration that supports thin film interference. The numerical and analytical study of the effect is found to be qualitatively in agreement with the experimental results. The study can set new paths toward more efficient design of spectrally selective thermophotovoltaic energy emitter at mid‐IR and novel mechanism for high temperature sensing on the ubiquitous CMOS platform.