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Electron Injection of Phosphorus Doped g‐C 3 N 4 Quantum Dots: Controllable Photoluminescence Emission Wavelength in the Whole Visible Light Range with High Quantum Yield
Author(s) -
Wu Jiang,
Yang Siwei,
Li Jipeng,
Yang Yucheng,
Wang Gang,
Bu Xiuming,
He Peng,
Sun Jing,
Yang Junhe,
Deng Yuan,
Ding Guqiao,
Xie Xiaoming
Publication year - 2016
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201600570
Subject(s) - photoluminescence , materials science , quantum yield , quantum dot , band gap , doping , fluorescence , graphitic carbon nitride , analytical chemistry (journal) , optoelectronics , visible spectrum , wavelength , photochemistry , optics , photocatalysis , chemistry , physics , organic chemistry , catalysis
The large band gap (2.7 eV) of graphite‐like carbon nitride (g‐C 3 N 4 ) enables the g‐C 3 N 4 quantum dots (g‐C 3 N 4 QDs) to show near ultraviolet‐blue photoluminescence. This study demonstrates the effective band gap control of g‐C 3 N 4 QDs by phosphorus doping for the first time. With the electronic injection process of lattice doped P, the band gap decreased observably. The emission wavelength of phosphorus doped g‐C 3 N 4 QDs (P‐g‐C 3 N 4 QDs) can be tuned in whole visible light range (385–762 nm) by changing the doping concentration. Due to the direct band gap of these P‐g‐C 3 N 4 QDs, the quantum yield is higher than 0.90. The authors also show the application value of these P‐g‐C 3 N 4 QDs in both in vitro and in vivo fluorescent bio‐imaging.
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