Electrically Pumped Whispering Gallery Mode Lasing from Au/ZnO Microwire Schottky Junction | Zendy

Bashar Sunayna B. | Zendy; Wu Chunxia | Zendy; Suja Mohammad | Zendy; Tian Hao | Zendy; Shi Wenhao | Zendy; Liu Jianlin | Zendy

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Electrically Pumped Whispering Gallery Mode Lasing from Au/ZnO Microwire Schottky Junction

Author(s) -

Bashar Sunayna B.,

Wu Chunxia,

Suja Mohammad,

Tian Hao,

Shi Wenhao,

Liu Jianlin

Publication year - 2016

Publication title -

advanced optical materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.89

H-Index - 91

ISSN - 2195-1071

DOI - 10.1002/adom.201600513

Subject(s) - lasing threshold , materials science , whispering gallery wave , schottky diode , optoelectronics , gain switching , diode , schottky barrier , laser , ultraviolet , whispering gallery , optics , wavelength , resonator , physics

Au/ZnO microwire Schottky diodes are fabricated. The devices exhibit typical Schottky diode I – V behavior with a turn‐on voltage of about 0.72 V. The hexagonal ZnO microwires act as whispering gallery mode (WGM) lasing microcavities. Under forward bias, a three‐microwire device exhibits WGM ultraviolet lasing spectra with a quality factor of about 1287. Output power of the laser has been measured at various injection currents, indicating threshold behavior with a threshold current of about 59 mA. Due to limited hole injection in the operation of Schottky diode, the lasing is a result of an excitonic recombination within the WGM cavity.

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