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Electrically Pumped Whispering Gallery Mode Lasing from Au/ZnO Microwire Schottky Junction
Author(s) -
Bashar Sunayna B.,
Wu Chunxia,
Suja Mohammad,
Tian Hao,
Shi Wenhao,
Liu Jianlin
Publication year - 2016
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201600513
Subject(s) - lasing threshold , materials science , whispering gallery wave , schottky diode , optoelectronics , gain switching , diode , schottky barrier , laser , ultraviolet , whispering gallery , optics , wavelength , resonator , physics
Au/ZnO microwire Schottky diodes are fabricated. The devices exhibit typical Schottky diode I – V behavior with a turn‐on voltage of about 0.72 V. The hexagonal ZnO microwires act as whispering gallery mode (WGM) lasing microcavities. Under forward bias, a three‐microwire device exhibits WGM ultraviolet lasing spectra with a quality factor of about 1287. Output power of the laser has been measured at various injection currents, indicating threshold behavior with a threshold current of about 59 mA. Due to limited hole injection in the operation of Schottky diode, the lasing is a result of an excitonic recombination within the WGM cavity.