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Orange‐Red‐Light‐Emitting Field‐Effect Transistors Based on Phosphorescent Pt(II) Complexes with Area Emission
Author(s) -
Wawrzinek Robert,
Muhieddine Khalid,
Ullah Mujeeb,
Koszo Peter B.,
Shaw Paul E.,
Grosjean Arnaud,
Maasoumi Fatemeh,
Stoltzfus Dani M.,
Clegg Jack K.,
Burn Paul L.,
Namdas Ebinazar B.,
Lo ShihChun
Publication year - 2016
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201600460
Subject(s) - phosphorescence , materials science , photoluminescence , quantum yield , amine gas treating , brightness , photochemistry , quantum efficiency , phosphorescent organic light emitting diode , solubility , ligand (biochemistry) , optoelectronics , fluorescence , chemistry , organic chemistry , optics , biochemistry , physics , receptor
Two new heteroleptic Pt(II) complexes bearing an n ‐hexyloxy substituted phenyllepidine‐based ligand and either a picolinate (pic) or acetylacetonate (acac) coligand are synthesized for use in organic light‐emitting field‐effect transistors (LEFETs). Both compounds are obtained in good yields via a short and straightforward synthetic route. It is found that while both Pt(II) complexes show good chemical stability and solubility, the coligand affects the photoluminescence quantum yield and crystal packing of the complexes. Although aggregate induced phosphorescence enhancement is not observed, it is found that high concentrations of the emitters in a poly[bis(4‐phenyl)(2,4,6‐trimethylphenyl)amine] host lead to improved charge injection in hybrid LEFETs. LEFETs with area emission, high ON/OFF ratios (>10 6 ) and mobilities (≈1.3 cm 2 V −1 s −1 ), and external quantum efficiencies of up to 0.1% at the highest brightness of 855 cd m −2 are demonstrated.

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