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Atomic‐Layered MoS 2 as a Tunable Optical Platform
Author(s) -
Qin Chengbing,
Gao Yan,
Qiao Zhixing,
Xiao Liantuan,
Jia Suotang
Publication year - 2016
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201600323
Subject(s) - materials science , optoelectronics , semiconductor , monolayer , electronics , molybdenum disulfide , band gap , photodetector , nanotechnology , electrical engineering , metallurgy , engineering
Monolayer molybdenum disulfide (MoS 2 ), a direct bandgap semiconductor with atomic thickness, provides significant advantages in many applications including high‐performance electronics, light emitters, and photodetectors/sensors. Controlling the electronic and optical properties of atomic‐layered MoS 2 is extremely important for its practical applications. Interestingly, modulating the optical properties by physical routes, such as layer thickness, twist angle, tensile strain, temperature, gas physisorption and electrical doping, is more attractive, as these methods can control optical properties in real‐time, reversible, and in situ. The physical routes would be beneficial for understanding the fundamentals of electronic and optical properties of atomic‐layered MoS 2 , and also for its promising application in advanced optical materials and next‐generation electronic devices. This review highlights recent, state‐of‐the‐art research on tuning the optical properties of atomic‐layered MoS 2 (including monolayer and few‐layer MoS 2 ). Physical routes and proposed mechanisms of these modulations are discussed. Crystal structures and electronic band properties of atomic‐layered MoS 2 are also reviewed, as they play important roles in understanding the modulation mechanisms. Finally, potential optical applications in electronic and optoelectronic devices based on tunable optical features are described, and a future prospective in this exciting field is presented.

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