Fast High‐Responsivity Few‐Layer MoTe 2  Photodetectors | Zendy

Octon Tobias J. | Zendy; Nagareddy V. Karthik | Zendy; Russo Saverio | Zendy; Craciun Monica F. | Zendy; Wright C. David | Zendy

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Fast High‐Responsivity Few‐Layer MoTe 2 Photodetectors

Author(s) -

Octon Tobias J.,

Nagareddy V. Karthik,

Russo Saverio,

Craciun Monica F.,

Wright C. David

Publication year - 2016

Publication title -

advanced optical materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.89

H-Index - 91

ISSN - 2195-1071

DOI - 10.1002/adom.201600290

Subject(s) - materials science , photodetection , optoelectronics , responsivity , photodetector , photoconductivity , band gap , photonics , layer (electronics) , heterojunction , electronics , electron mobility , nanotechnology , electrical engineering , engineering

The transition metal dichalcogenide MoTe 2 is fabricated into few‐layer field‐effect transistors that show hole conduction with a mobility of 2.04 V cm −2 s −1 . Four‐layer MoTe 2 devices have a high photoresponsivity of 6 A W −1 and a response time, at around 160 μs, over 100 times faster than previously reported, making them a strong candidate for high speed and high sensitivity photodetection.

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