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Fast High‐Responsivity Few‐Layer MoTe 2 Photodetectors
Author(s) -
Octon Tobias J.,
Nagareddy V. Karthik,
Russo Saverio,
Craciun Monica F.,
Wright C. David
Publication year - 2016
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201600290
Subject(s) - materials science , photodetection , optoelectronics , responsivity , photodetector , photoconductivity , band gap , photonics , layer (electronics) , heterojunction , electronics , electron mobility , nanotechnology , electrical engineering , engineering
The transition metal dichalcogenide MoTe 2 is fabricated into few‐layer field‐effect transistors that show hole conduction with a mobility of 2.04 V cm −2 s −1 . Four‐layer MoTe 2 devices have a high photoresponsivity of 6 A W −1 and a response time, at around 160 μs, over 100 times faster than previously reported, making them a strong candidate for high speed and high sensitivity photodetection.