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Heteroepitaxial Growth of GaN on Unconventional Templates and Layer‐Transfer Techniques for Large‐Area, Flexible/Stretchable Light‐Emitting Diodes
Author(s) -
Choi Jun Hee,
Kim Jinwoo,
Yoo Hyobin,
Liu Jinyun,
Kim Sunil,
Baik ChanWook,
Cho ChaeRyong,
Kang Jin Gu,
Kim Miyoung,
Braun P. V.,
Hwang Sungwoo,
Jung TaeSung
Publication year - 2016
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201500526
Subject(s) - materials science , light emitting diode , transfer printing , optoelectronics , gallium nitride , layer (electronics) , diode , nanotechnology , composite material
There have been significant recent developments in the growth of single‐crystal gallium nitride (GaN) on unconventional templates for large‐area blue or green light‐emitting diodes (LEDs) which, together with layer transfer onto foreign substrates, can enable flexible and stretchable lighting applications. Here, the heteroepitaxial growth of GaN on amorphous and single‐crystal substrates employing various interlayers and nucleation layers is reviewed, as well as the use of weak interfaces for layer‐transfer onto foreign substrates. Recent progress in low‐temperature GaN‐based red–green–blue (RGB) LEDs on glass substrates, which has exhibited a calculated efficiency of 11% compared with that from commertial LEDs, is discussed. Layer‐transfer techniques with various interlayers are also discussed. These heteroepitaxial GaN growth and layer‐transfer technologies are expected to lead to new lighting and display devices with high efficiency and full‐color tunability, which are suitable for large‐area, stretchable display and lighting applications.