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Hybrid Light‐Emitting Transistors Based on Low‐Temperature Solution‐Processed Metal Oxides and a Charge‐Injecting Interlayer
Author(s) -
Ullah Mujeeb,
Lin YenHung,
Muhieddine Khalid,
Lo ShihChun,
Anthopoulos Thomas D.,
Namdas Ebinazar B.
Publication year - 2016
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201500474
Subject(s) - materials science , transistor , oxide , optoelectronics , field (mathematics) , interface (matter) , computer science , charge (physics) , nanotechnology , electrical engineering , physics , voltage , particle physics , metallurgy , engineering , mathematics , capillary number , capillary action , pure mathematics , composite material
The performance of solution and low‐temperature processed hybrid light‐emitting field‐effect transistors is enahnced by a new development strategy. The manipulation of the work function at the oxide/polymer interface is presented for achieving high all‐round performance in these devices.