Hybrid Light‐Emitting Transistors Based on Low‐Temperature Solution‐Processed Metal Oxides and a Charge‐Injecting Interlayer | Zendy

Ullah Mujeeb | Zendy; Lin YenHung | Zendy; Muhieddine Khalid | Zendy; Lo ShihChun | Zendy; Anthopoulos Thomas D. | Zendy; Namdas Ebinazar B. | Zendy

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Hybrid Light‐Emitting Transistors Based on Low‐Temperature Solution‐Processed Metal Oxides and a Charge‐Injecting Interlayer

Author(s) -

Ullah Mujeeb,

Lin YenHung,

Muhieddine Khalid,

Lo ShihChun,

Anthopoulos Thomas D.,

Namdas Ebinazar B.

Publication year - 2016

Publication title -

advanced optical materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.89

H-Index - 91

ISSN - 2195-1071

DOI - 10.1002/adom.201500474

Subject(s) - materials science , transistor , oxide , optoelectronics , field (mathematics) , computer science , interface (matter) , work (physics) , nanotechnology , electrical engineering , mechanical engineering , voltage , capillary action , pure mathematics , metallurgy , composite material , engineering , mathematics , capillary number

The performance of solution and low‐temperature processed hybrid light‐emitting field‐effect transistors is enahnced by a new development strategy. The manipulation of the work function at the oxide/polymer interface is presented for achieving high all‐round performance in these devices.

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