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High Responsivity, Broadband, and Fast Graphene/Silicon Photodetector in Photoconductor Mode
Author(s) -
Chen Zefeng,
Cheng Zhenzhou,
Wang Jiaqi,
Wan Xi,
Shu Chester,
Tsang Hon Ki,
Ho Ho Pui,
Xu JianBin
Publication year - 2015
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201500127
Subject(s) - photodetector , responsivity , materials science , broadband , optoelectronics , graphene , chemical vapor deposition , infrared , silicon , mode (computer interface) , computer science , optics , nanotechnology , telecommunications , physics , operating system
A fast‐response photodetector is developed, which is highly photoresponsive and works over a broadband. It is fabricated using a combination of chemical vapor deposition graphene and silicon, together with the utilization of a lateral photoconductor operating mode. The photodetector exhibits high responsivities of ≈1.0 × 10 4 and ≈0.23 A W −1 in the visible (632 nm) and infrared regions (1550 nm), respectively. The response time is both below 3 μs in both spectral regions.
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