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Silicon Carbide: Enhanced Dielectric Properties and Excellent Microwave Absorption of SiC Powders Driven with NiO Nanorings (Advanced Optical Materials 3/2014)
Author(s) -
Yang Huijing,
Cao Maosheng,
Li Yong,
Shi Honglong,
Hou Zhiling,
Fang Xiaoyong,
Jin Haibo,
Wang Wenzhong,
Yuan Jie
Publication year - 2014
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201470013
Subject(s) - materials science , non blocking i/o , microwave , silicon carbide , absorption (acoustics) , dielectric , carbide , optoelectronics , nanotechnology , composite material , catalysis , chemistry , physics , quantum mechanics , biochemistry
A microwave‐absorption material with a wonderful microwave response is realized by M. Cao, H. Jin, W. Wang, and co‐workers, who grow NiO nanorings on the surface of silicon carbide via a facile two‐step strategy described on page 214. The SiC assembled with NiO nanorings exhibits highly enhanced dielectric properties and a strong microwave absorption due to the hopping charge induced by the NiO nanorings.