Photonic Materials: Silicon Hyperuniform Disordered Photonic Materials with a Pronounced Gap in the Shortwave Infrared (Advanced Optical Materials 2/2014)

Unusual network structures are used by F. Scheffold and co‐workers as templates for a new type of disordered photonic material. The networks are constructed by 3D tessellation based on numerically generated point patterns with long‐range hyperuniform correlations. On page 115, using a combination of direct laser writing lithography and chemical vapor deposition, mesoscale silicon replicas of the disordered networks are created. Optical transmittance measurements show a pronounced gap in the shortwave infrared at λ G ≈ 2.6 μm.