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Photonic Materials: Silicon Hyperuniform Disordered Photonic Materials with a Pronounced Gap in the Shortwave Infrared (Advanced Optical Materials 2/2014)
Author(s) -
Muller Nicolas,
Haberko Jakub,
Marichy Catherine,
Scheffold Frank
Publication year - 2014
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201470009
Subject(s) - materials science , photonics , transmittance , optoelectronics , infrared , photonic crystal , silicon , silicon photonics , optics , physics
Unusual network structures are used by F. Scheffold and co‐workers as templates for a new type of disordered photonic material. The networks are constructed by 3D tessellation based on numerically generated point patterns with long‐range hyperuniform correlations. On page 115, using a combination of direct laser writing lithography and chemical vapor deposition, mesoscale silicon replicas of the disordered networks are created. Optical transmittance measurements show a pronounced gap in the shortwave infrared at λ G ≈ 2.6 μm.