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Optical Storage: Phase‐Change Nanodot Material for an Optical Memory (Advanced Optical Materials 11/2013)
Author(s) -
Yamada Noboru,
Kojima Rie,
Hisada Kazuya,
Mihara Takashi,
Tsuchino Akio,
Fujinoki Norihito,
Birukawa Masahiro,
Matsunaga Toshiyuki,
Yasuda Nobuhiro,
Fukuyama Yoshimitsu,
Ito Kiminori,
Tanaka Yoshihito,
Kimura Shigeru,
Takata Masaki
Publication year - 2013
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201370068
Subject(s) - materials science , nanodot , nanopillar , optoelectronics , sputtering , amorphous solid , optical storage , phase change material , picosecond , etching (microfabrication) , lithography , nanotechnology , thin film , laser , optics , nanostructure , phase change , layer (electronics) , engineering physics , chemistry , physics , organic chemistry , engineering
Each Ge 10 Sb 90 amorphous nanodot with 50 nm diameter fabricated by N. Yamada et al. on page 820 rapidly crystallizes, accompanied with large reflectivity change in response to 300 picosecond laser heating. This indicates the high potential of this material for use in an ideal ‘green storage’ system with ultra‐high density and high efficiency. The nanodot array can be prepared both by sputtering several inorganic material films on nanopillars and by processing a Ge 10 Sb 90 film using electron‐beam lithography and ion‐etching techniques.