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Fully Flexible GaN Light‐Emitting Diodes through Nanovoid‐Mediated Transfer
Author(s) -
Choi Jun Hee,
Cho Eun Hyoung,
Lee Yun Sung,
Shim MunBo,
Ahn Ho Young,
Baik ChanWook,
Lee Eun Hong,
Kim Kihong,
Kim TaeHo,
Kim Sangwon,
Cho KyungSang,
Yoon Jongseung,
Kim Miyoung,
Hwang Sungwoo
Publication year - 2014
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201300435
Subject(s) - materials science , light emitting diode , optoelectronics , gallium nitride , electroluminescence , diode , nitride , nanotechnology , layer (electronics)
Recently, achieving flexible and highly efficient light‐emitting elements is the most noticeable demand for lighting or displays. Here, fully flexible gallium nitride (GaN) light‐emitting diodes (LEDs) are demonstrated based on a unique transfer method. The LED structure consisting of GaN pyramid arrays are first fabricated on an amorphous glass‐based template with a low‐temperature gallium nitride/titanium (LT‐GaN/Ti) hetero‐interface, then released and embedded into a flexible or stretchable substrate using a specialized interface control. Nanovoids created during thermal annealing render the hetero‐interface weaker than the other interfaces. This interface is further weakened by a post‐mechanical treatment for gentle release of the GaN pyramid arrays from the interface during a transfer process. The LEDs typically have a total thickness of }70 lm and exhibit stable surface‐emitting electroluminescence even at a bending radius of }2 mm with exceptionally high luminance values of 595 and 175 cd/m 2 at peak wavelengths of 514 and 483 nm, respectively. The results suggest a route to high brightness, large, flexible/stretchable blue or green lighting or displays.