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Low‐Stress Silicon Nitride Platform for Mid‐Infrared Broadband and Monolithically Integrated Microphotonics
Author(s) -
Lin Pao Tai,
Singh Vivek,
Lin HaoYu Greg,
Tiwald Tom,
Kimerling Lionel C.,
Agarwal Anuradha Murthy
Publication year - 2013
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201300205
Subject(s) - materials science , silicon nitride , broadband , optoelectronics , infrared , silicon , extinction ratio , nitride , wavelength , silicon oxynitride , extinction (optical mineralogy) , thin film , optics , nanotechnology , layer (electronics) , physics
A monolithic Mid‐IR microphotonics platform is demonstrated by engineered Si‐rich and low‐stress silicon nitride (SiN x ) thin films. A measured optical transmission loss of < 0.2 dB cm ‐1 is achieved over a broad mid‐IR spectrum. Using the SiN x film an efficient mid‐IR directional coupler is developed that shows a high extinction ratio of 7 dB upon wavelength scanning (λ = 2.45–2.65 μm).