Low‐Stress Silicon Nitride Platform for Mid‐Infrared Broadband and Monolithically Integrated Microphotonics | Zendy

Lin Pao Tai | Zendy; Singh Vivek | Zendy; Lin HaoYu Greg | Zendy; Tiwald Tom | Zendy; Kimerling Lionel C. | Zendy; Agarwal Anuradha Murthy | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Low‐Stress Silicon Nitride Platform for Mid‐Infrared Broadband and Monolithically Integrated Microphotonics

Author(s) -

Lin Pao Tai,

Singh Vivek,

Lin HaoYu Greg,

Tiwald Tom,

Kimerling Lionel C.,

Agarwal Anuradha Murthy

Publication year - 2013

Publication title -

advanced optical materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.89

H-Index - 91

ISSN - 2195-1071

DOI - 10.1002/adom.201300205

Subject(s) - materials science , silicon nitride , broadband , optoelectronics , infrared , silicon , extinction ratio , nitride , wavelength , silicon oxynitride , extinction (optical mineralogy) , thin film , optics , nanotechnology , layer (electronics) , physics

A monolithic Mid‐IR microphotonics platform is demonstrated by engineered Si‐rich and low‐stress silicon nitride (SiN x ) thin films. A measured optical transmission loss of < 0.2 dB cm ‐1 is achieved over a broad mid‐IR spectrum. Using the SiN x film an efficient mid‐IR directional coupler is developed that shows a high extinction ratio of 7 dB upon wavelength scanning (λ = 2.45–2.65 μm).

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research