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Enhanced Terahertz Bandwidth and Power from GaAsBi‐based Sources
Author(s) -
Heshmat Barmak,
MasnadiShirazi Mostafa,
Lewis Ryan Burton,
Zhang Jinye,
Tiedje Thomas,
Gordon Reuven,
Darcie Thomas Edward
Publication year - 2013
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.201300190
Subject(s) - terahertz radiation , bandwidth (computing) , optoelectronics , materials science , optical switch , computer science , power (physics) , telecommunications , physics , quantum mechanics
Terahertz photoconductive (PC) switches are popular for THz wave generation . Unlike nonlinear crystals, they don't require high optical excitation power and precise phase matching, but their output THz power is limited. Here, the conventional substrate is replaced with enhanced GaAsBi (growth recipe included) and its performance is compared to that of a LT‐GaAs PC switch and a nanoplasmonic PC switch. The results show a 0.5 THz increase in bandwidth and 4‐fold improvement in emission power for GaAsBi and GaAsBi nanoplasmonic PC switches, respectively