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Nonlinear Photoelectric Properties by Strained MoS 2 and SnO 2 Core‐Shell Nanotubes for Flexible Visible Light Photodetectors
Author(s) -
Han Jin Kyu,
Song Da Som,
Lim Yi Rang,
Agbenyeke Raphael E.,
Castelli Ivano E.,
Esposito Vincenzo,
Kim Sun Young,
Bu Sang Don,
Song Wooseok,
Myung Sung,
Lee Sun Sook,
Lim Jongsun
Publication year - 2021
Publication title -
advanced materials technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.184
H-Index - 42
ISSN - 2365-709X
DOI - 10.1002/admt.202001105
Subject(s) - photocurrent , photodetector , materials science , optoelectronics , photoelectric effect , photoconductivity , band gap , coaxial , nanowire , nanotube , nanotechnology , carbon nanotube , electrical engineering , engineering
A new type of coaxial hetero‐structured MoS 2 /SnO 2 nanotube (MS‐NT) array is rationally designed for flexible visible light photodetector. Herein, a suitable solution for fabricating MS‐NT comprising SnO 2 with controlled thickness and strain is proposed. The thickness of SnO 2 deposited on MoS 2 nanotubes are delicately manipulated by adjusting atomic layer deposition (ALD) cycles, which cause the internal tensile strain of the hybrid nanotubes. The photocurrent of the MS‐NT‐based photodetector exhibits high photoresponsivity values of 198.4 mA W ‐1 and external quantum efficiency of 0.78%. In the analysis, a linear correlation between the excitation power and the photocurrent extracted from the MNT‐based devices is discerned. At the same time, a superlinearity of photocurrent in the MS‐NT arrays‐based device is found. Density functional theory calculations are adopted to unveil the strong correlation between the strain, bandgap, and photocurrent of the MS‐NT, which is a decisive factor for understanding the experimental evidences. The detailed mechanism for enhance photoresponsivity is further suggested for the strain‐tailored MS‐NT arrays‐based device. Such peculiar properties are expected to open a new chapter in the era of smart optical devices that require low driving voltage and high power efficiency.