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Quasi‐Nonvolatile Silicon Memory Device
Author(s) -
Lim Doohyeok,
Son Jaemin,
Cho Kyoungah,
Kim Sangsig
Publication year - 2020
Publication title -
advanced materials technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.184
H-Index - 42
ISSN - 2365-709X
DOI - 10.1002/admt.202000915
Subject(s) - non volatile memory , semiconductor memory , non volatile random access memory , computer science , silicon , memory refresh , memory hierarchy , materials science , computer memory , optoelectronics , electronic engineering , computer hardware , parallel computing , engineering , cache
Memory hierarchy among conventional memory technologies is one of the main bottlenecks in modern computer systems; alternative memory technologies are thus necessary for quasi‐nonvolatile memory applications. Herein, a fully complementary metal‐oxide‐semiconductor‐compatible quasi‐nonvolatile memory composed of p + ‐n‐p‐n + silicon on a silicon‐on‐insulator substrate is presented. The quasi‐nonvolatile silicon memory device demonstrates high‐speed write capability ( ≤ 100 ns), long retention time (100 s), and nondestructive read capability (1000 s), with high sensing current margin ( ≈ 10 9 ) and reliable endurance ( ≥ 10 9 ) at low voltages ( ≤ 1 V). Disturb immunity for memory array operations is also observed. This study demonstrates that the proposed quasi‐nonvolatile silicon memory device is a promising candidate that can revolutionize the entire memory hierarchy.