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Tuning Electrical and Optical Properties of MoSe 2 Transistors via Elemental Doping
Author(s) -
Xia Yin,
Wei Lujun,
Deng Jie,
Zong Lingyi,
Wang Chaolun,
Chen Xinyu,
Liang Fang,
Luo Chen,
Bao Wenzhong,
Xu Zihan,
Zhou Jing,
Pu Yong,
Wu Xing
Publication year - 2020
Publication title -
advanced materials technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.184
H-Index - 42
ISSN - 2365-709X
DOI - 10.1002/admt.202000307
Subject(s) - materials science , homojunction , doping , dopant , optoelectronics , stacking , band gap , diode , nanotechnology , physics , nuclear magnetic resonance
Controlled doping of transition‐metal dichalcogenide (TMDC)‐layered materials is of great importance for practical device application. Doping of TMDCs and tuning of the bandgap properties remain challenging owing to the difficulty of breaking covalent bonds. In this work, the doping of V, Fe, and Nb atoms into MoSe 2 is successfully synthesized using the chemical vapor transport method. By the absorption of V or Nb dopants, the intrinsic n ‐type MoSe 2 is tuned to be of p type. A p ‐ n diode based on a homojunction is fabricated by stacking the n ‐ and p ‐type MoSe 2 vertically. The photoresponse range of intrinsic MoSe 2 is only up to 785 nm. However, the photodetector based on the doped MoSe 2 flake with V, Fe, and Nb can be used up to the near‐infrared (1550 nm) region at room temperature. Furthermore, the photoresponse wavelength of a V‐doped MoSe 2 could reach up to 10 µm. The results indicate that the elemental doping methods could enrich the electrical and optical application prospects of MoSe 2 .