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Polyoxometalates‐Graphene Oxide: Controlled Nonvolatile Transition in Polyoxometalates‐Graphene Oxide Hybrid Memristive Devices (Adv. Mater. Technol. 3/2019)
Author(s) -
Chen Xiaoli,
Zhu Xin,
Zhang ShiRui,
Pan Jingyi,
Huang Pu,
Zhang Chen,
Ding Guanglong,
Zhou Ye,
Zhou Kui,
Roy Vellaisamy A. L.,
Han SuTing
Publication year - 2019
Publication title -
advanced materials technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.184
H-Index - 42
ISSN - 2365-709X
DOI - 10.1002/admt.201970016
Subject(s) - graphene , oxide , materials science , nanotechnology , resistive random access memory , non volatile memory , trapping , optoelectronics , fabrication , electrical engineering , voltage , engineering , medicine , ecology , alternative medicine , pathology , metallurgy , biology
In article number 1800551 , Ye Zhou, Vellaisamy A. L. Roy, Su‐Ting Han, and co‐workers demonstrate a transition from write‐once‐read‐many‐times to bipolar resistive switching in graphene oxide‐based resistance random access memory. A charge trapping/de‐trapping mechanism associated with the modulation of the interface barrier between polyoxometalates and graphene oxide is proposed to account for this characteristic.