Resistive Switching: Cycling‐Induced Degradation of Organic–Inorganic Perovskite‐Based Resistive Switching Memory (Adv. Mater. Technol. 1/2019) | Zendy

Ren Yanyun | Zendy; Ma Hanlu | Zendy; Wang Wei | Zendy; Wang Zhongqiang | Zendy; Xu Haiyang | Zendy; Zhao Xiaoning | Zendy; Liu Weizhen | Zendy; Ma Jiangang | Zendy; Liu Yichun | Zendy

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Resistive Switching: Cycling‐Induced Degradation of Organic–Inorganic Perovskite‐Based Resistive Switching Memory (Adv. Mater. Technol. 1/2019)

Author(s) -

Ren Yanyun,

Ma Hanlu,

Wang Wei,

Wang Zhongqiang,

Xu Haiyang,

Zhao Xiaoning,

Liu Weizhen,

Ma Jiangang,

Liu Yichun

Publication year - 2019

Publication title -

advanced materials technologies

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.184

H-Index - 42

ISSN - 2365-709X

DOI - 10.1002/admt.201970004

Subject(s) - degradation (telecommunications) , resistive random access memory , cycling , materials science , reset (finance) , perovskite (structure) , voltage , resistive touchscreen , optoelectronics , chemical engineering , electrical engineering , engineering , archaeology , financial economics , economics , history

In article number 1800238 , Zhongqiang Wang, Haiyang Xu, and co‐workers describe the endurance degradation of CH 3 NH 3 PbI 3 ‐based RRAM. The degradation is attributed to the excessive defect accumulation during cycling operation. During the reset process, a negative set event is observed to accelerate the endurance degradation rate. Moreover, the decrease of transition voltages suggests a reduction of the migration barrier of iodine vacancies with cycling operation.

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