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Resistive Switching: Cycling‐Induced Degradation of Organic–Inorganic Perovskite‐Based Resistive Switching Memory (Adv. Mater. Technol. 1/2019)
Author(s) -
Ren Yanyun,
Ma Hanlu,
Wang Wei,
Wang Zhongqiang,
Xu Haiyang,
Zhao Xiaoning,
Liu Weizhen,
Ma Jiangang,
Liu Yichun
Publication year - 2019
Publication title -
advanced materials technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.184
H-Index - 42
ISSN - 2365-709X
DOI - 10.1002/admt.201970004
Subject(s) - degradation (telecommunications) , resistive random access memory , cycling , materials science , reset (finance) , perovskite (structure) , voltage , resistive touchscreen , optoelectronics , chemical engineering , electrical engineering , engineering , archaeology , financial economics , economics , history
In article number 1800238 , Zhongqiang Wang, Haiyang Xu, and co‐workers describe the endurance degradation of CH 3 NH 3 PbI 3 ‐based RRAM. The degradation is attributed to the excessive defect accumulation during cycling operation. During the reset process, a negative set event is observed to accelerate the endurance degradation rate. Moreover, the decrease of transition voltages suggests a reduction of the migration barrier of iodine vacancies with cycling operation.