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Flexible Ternary Resistive Memory from Organic Bulk Heterojunction
Author(s) -
Zhao YongYan,
Sun WuJi,
Wang MinGang,
He JingHui,
Lu JianMei
Publication year - 2020
Publication title -
advanced materials technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.184
H-Index - 42
ISSN - 2365-709X
DOI - 10.1002/admt.201900681
Subject(s) - materials science , resistive random access memory , ternary operation , heterojunction , stacking , yield (engineering) , optoelectronics , fluorene , active layer , layer (electronics) , acceptor , substrate (aquarium) , chemical engineering , polymer , composite material , electrode , organic chemistry , chemistry , thin film transistor , computer science , engineering , programming language , physics , oceanography , geology , condensed matter physics
Organic ternary resistive memory suffers from low device yield and wide writing voltage distribution and improvement through laborious molecular formula innovation is limited. Here, organic bulk heterojunction is employed as the active material in resistive random‐access memories (RRAMs). The ternary memory yield of the device reaches 58% when prepared by blending X55 (N2, 7‐bis(4‐methoxyphenyl)N2, N7‐bis (2‐spiro [fluorene‐9,9′‐oxanthracene]‐spiro[fluorene‐9,9′‐oxanthracene]‐2,7‐diamine) and PCBM (1‐(3‐methoxycarbonyl)propyl‐1‐phenyl[6,6]C61) with a 1:1 molar ratio, which is the highest yield among all prepared devices including pure X55, PCBM, or layer‐by‐layer stacking of X55 and PCBM. Furthermore, the mixture could be made on a flexible substrate and has sufficient toughness to sustain its memory performance after 5000 bending cycles or a bending angle of 62°. This work provokes new thinking about future material design and selection with donor–acceptor bulk heterojunction use in potential wearable RRAM devices.