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Cycling‐Induced Degradation of Organic–Inorganic Perovskite‐Based Resistive Switching Memory
Author(s) -
Ren Yanyun,
Ma Hanlu,
Wang Wei,
Wang Zhongqiang,
Xu Haiyang,
Zhao Xiaoning,
Liu Weizhen,
Ma Jiangang,
Liu Yichun
Publication year - 2019
Publication title -
advanced materials technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.184
H-Index - 42
ISSN - 2365-709X
DOI - 10.1002/admt.201800238
Subject(s) - cycling , degradation (telecommunications) , resistive random access memory , materials science , reset (finance) , temperature cycling , perovskite (structure) , resistive touchscreen , computer science , chemistry , electrical engineering , voltage , physics , engineering , telecommunications , thermodynamics , crystallography , archaeology , thermal , financial economics , economics , history , computer vision
Abstract As one key issue of resistive switching (RS) memory, the cycling endurance is poorly understood in hybrid perovskite‐based memory devices. Here, the cycling failure and the corresponding cycling‐induced degradation of CH 3 NH 3 PbI 3 ‐based resistive random access memory devices are discussed. The high resistance state clearly decreases with the number of operation cycles, finally triggering irreversible failure in the collapse of switching window. By monitoring the I – V curves for all cycles, a negative set event is observed to be the critical turning point that considerably accelerates the cycling degradation rate. The decrease of | V set | and | V reset | indicates a reduction of the migration barrier of iodine vacancies ( V I ), which accounts for the appearance of a negative set after cycling. The understanding of RS cycling degradation can promote the optimization of device endurance by slowing the defect accumulation rate.