Premium
Improved Performance of Zinc Oxide Thin Film Transistor Pressure Sensors and a Demonstration of a Commercial Chip Compatibility with the New Force Sensing Technology
Author(s) -
Vishniakou Siarhei,
Chen Renjie,
Ro Yun Goo,
Brennan Christopher J.,
Levy Cooper,
Yu Edward T.,
Dayeh Shadi A.
Publication year - 2018
Publication title -
advanced materials technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.184
H-Index - 42
ISSN - 2365-709X
DOI - 10.1002/admt.201700279
Subject(s) - materials science , pressure sensor , touchscreen , transistor , thin film transistor , chip , optoelectronics , thin film , computer science , nanotechnology , electronic engineering , electrical engineering , computer hardware , voltage , engineering , mechanical engineering , layer (electronics)
A zinc oxide thin film transistor is developed and optimized that simultaneously functions as a transistor and a force sensor, thus allowing for scalable integration of sensors into arrays without the need for additional addressing elements. Through systematic material deposition, microscopy, and piezoelectric characterization, it is determined that an O 2 rich deposition condition improves the transistor performance and pressure sensing characteristics. With these optimizations, a sensitivity of 4 nA kPa −1 and a latency of below 1 ms are achieved, exceeding the criteria for successful commercialization of arrayed pressure sensors. The functionality of 16 × 16 pressure sensor arrays on thin bendable glass substrates for integrated low weight and flexible touchscreen displays is fabricated and demonstrated and read‐out electronics to interface with the arrays and to record their response in real‐time are developed. Finally, the application of these sensors for mobile displays via their operation with an existing commercial touch integrated circuit controller is demonstrated.