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Charge Injection: Asymmetric Split‐Gate Ambipolar Transistor and Its Circuit Application to Complementary Inverter (Adv. Mater. Technol. 4/2016)
Author(s) -
Yoo Hocheon,
Smits Edsger C. P.,
van Breemen Albert J. J. M.,
van der Steen JanLaurens P. J.,
Torricelli Fabrizio,
Ghittorelli Matteo,
Lee Jiyoul,
Gelinck Gerwin H.,
Kim JaeJoon
Publication year - 2016
Publication title -
advanced materials technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.184
H-Index - 42
ISSN - 2365-709X
DOI - 10.1002/admt.201670017
Subject(s) - ambipolar diffusion , noise margin , inverter , thin film transistor , optoelectronics , transistor , materials science , electrical engineering , logic gate , voltage , electron , nanotechnology , physics , engineering , quantum mechanics , layer (electronics)
In article number 1600044, Jiyoul Lee, Gerwin H. Gelinck, Jae‐Joon Kim, and co‐workers present a novel ambipolar split‐gate thin‐film transistor (TFT). Depending on the bias voltage at the side‐gate, an ambipolar TFT can operate as an either p‐type or n‐type device selectively. A complementary inverter based on ambipolar split‐gate TFTs is demonstrated, which shows the higher noise margin and DC‐gain.