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Asymmetric Split‐Gate Ambipolar Transistor and Its Circuit Application to Complementary Inverter
Author(s) -
Yoo Hocheon,
Smits Edsger C. P.,
van Breemen Albert J. J. M.,
van der Steen JanLaurens P. J.,
Torricelli Fabrizio,
Ghittorelli Matteo,
Lee Jiyoul,
Gelinck Gerwin H.,
Kim JaeJoon
Publication year - 2016
Publication title -
advanced materials technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.184
H-Index - 42
ISSN - 2365-709X
DOI - 10.1002/admt.201600044
Subject(s) - ambipolar diffusion , noise margin , inverter , transistor , computer science , noise (video) , electrical engineering , physics , engineering , electron , artificial intelligence , quantum mechanics , voltage , image (mathematics)
Using a concept of asymmetric side gate and main gate , it is shown that it is possible to realize unipolar transport (both p‐type and n‐type) in a thin‐film transistor with a high‐performance ambipolar polymer semiconductor. In a complementary inverter, this results in higher noise margin and DC gain.