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Al 2 O 3 Diffusion Barrier: In‐Situ Observation of the Formation of NiSi/Ni 2 Si Heterojunction in SiGe Nanowire with Al 2 O 3 Diffusion Barrier Layer (Adv. Mater. Interfaces 14/2021)
Author(s) -
Lee YuChuan,
Lyu LianMing,
Lu MingYen
Publication year - 2021
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202170081
Subject(s) - heterojunction , materials science , diffusion barrier , nanowire , diffusion , fabrication , optoelectronics , nanotechnology , barrier layer , layer (electronics) , medicine , physics , alternative medicine , pathology , thermodynamics
In article number 2100422, Yu‐Chuan Lee, Lian‐Ming Lyu, and Ming‐Yen Lu demonstrate the manipulation of the phases of Ni silicides when Ni diffuses into SiGe nanowire (NW) with the introduction of Al 2 O 3 diffusion barrier. Since the diffusion barrier is very thin (≈5 nm), Ni atoms can pass through the barrier and form the NiSi/Ni 2 Si heterojunction with SiGe NW. This study provides the insights for fabrication of semiconducting devices.