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Performance of CsPbBr 3 /HfO 2 /Si: Performance‐Enhanced CsPbBr 3 /HfO 2 /Si Heterostructure Optoelectronics through the Tunneling Effect (Adv. Mater. Interfaces 11/2021)
Author(s) -
Wang Yanhao,
Zheng Wei,
Ji Hao,
Shen Depeng,
Zhang Yuhai,
Han Yingkuan,
Gao Jianwei,
Qiang Le,
Liu Hong,
Han Lin,
Zhang Yu
Publication year - 2021
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202170062
Subject(s) - heterojunction , materials science , optoelectronics , photodetector , quantum tunnelling , perovskite (structure) , layer (electronics) , silicon , nanotechnology , chemical engineering , engineering
The tunneling effect through a thin HfO 2 layer enables a CsPbBr 3 /HfO 2 /Si heterostructure photodetector with enhanced optoelectronic performance. In article number 2100279, Yu Zhang and co‐workers demonstrate that the optoelectronic performance of the CsPbBr 3 /HfO 2 /Si heterostructure device can be modulated through both V ds and V gs , providing flexibility for different applications.