Performance of CsPbBr 3 /HfO 2 /Si: Performance‐Enhanced CsPbBr 3 /HfO 2 /Si Heterostructure Optoelectronics through the Tunneling Effect (Adv. Mater. Interfaces 11/2021) | Zendy

Wang Yanhao | Zendy; Zheng Wei | Zendy; Ji Hao | Zendy; Shen Depeng | Zendy; Zhang Yuhai | Zendy; Han Yingkuan | Zendy; Gao Jianwei | Zendy; Qiang Le | Zendy; Liu Hong | Zendy; Han Lin | Zendy; Zhang Yu | Zendy

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Performance of CsPbBr 3 /HfO 2 /Si: Performance‐Enhanced CsPbBr 3 /HfO 2 /Si Heterostructure Optoelectronics through the Tunneling Effect (Adv. Mater. Interfaces 11/2021)

Author(s) -

Wang Yanhao,

Zheng Wei,

Ji Hao,

Shen Depeng,

Zhang Yuhai,

Han Yingkuan,

Gao Jianwei,

Qiang Le,

Liu Hong,

Han Lin,

Zhang Yu

Publication year - 2021

Publication title -

advanced materials interfaces

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.671

H-Index - 65

ISSN - 2196-7350

DOI - 10.1002/admi.202170062

Subject(s) - heterojunction , materials science , optoelectronics , photodetector , quantum tunnelling , perovskite (structure) , layer (electronics) , silicon , nanotechnology , chemical engineering , engineering

The tunneling effect through a thin HfO 2 layer enables a CsPbBr 3 /HfO 2 /Si heterostructure photodetector with enhanced optoelectronic performance. In article number 2100279, Yu Zhang and co‐workers demonstrate that the optoelectronic performance of the CsPbBr 3 /HfO 2 /Si heterostructure device can be modulated through both V ds and V gs , providing flexibility for different applications.

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